 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| H5N5001FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1380 (Z) 1st. Edition Mar. 2001 Features * * * * * Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) =1.1 typ. : I DSS =1A max (at VDS = 500 V) : tf = 15ns typ (at VGS = 10 V, V DD = 250 V, I D = 2.5 A) : Qg = 15nC typ (at VDD = 400 V, V GS = 10 V, I D = 5 A) Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. Source 3 H5N5001FM Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Tch 150C Symbol VDSS VGSS ID I D(pulse) I DR I DR(pulse) I AP Note3 Pch Note2 Note1 Note1 Ratings 500 30 5 20 5 20 5 30 4.17 150 -55 to +150 Unit V V A A A A A W C/W C C ch-c Tch Tstg H5N5001FM Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS I GSS Min 500 -- -- 3.0 -- 3.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 1.1 4.5 580 70 13 20 15 65 15 15 3 8 0.85 400 1.5 Max -- 0.1 1 4.0 1.5 -- -- -- -- -- -- -- -- -- -- -- 1.3 -- -- Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions I D = 10mA, VGS = 0 VGS = 30V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V I D = 2.5A, VGS = 10VNote4 I D = 2.5A, VDS = 10V Note4 VDS = 25V VGS = 0 f = 1MHz I D = 2.5A VGS = 10V RL = 100 Rg = 10 VDD = 400V VGS = 10V I D = 5A I F = 5A, VGS = 0 I F = 5A, VGS = 0 diF/ dt =100A/s Zero gate voltege drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf Qg Qgs Qgd VDF t rr Qrr H5N5001FM Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D (A) 100 30 10 3 1 0.3 0.1 0.03 0.01 0 50 100 150 Tc (C) 200 1 Case Temperature Maximum Safe Operation Area 10 10 PW DC Op er 30 Channel Dissipation Drain Current = 1m 10 m s( 1s 0 s s s 20 at ion (T ho ) 10 Operation in this area is limited by R DS(on) Ta = 25 C c= t) 25 C 30 3 10 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 Pulse Test 8V 8 10 V 6V 5.5 V (A) 10 Typical Transfer Characteristics V DS = 10 V Pulse Test I D (A) 8 6 ID 5V Drain Current 6 Drain Current 4 4 Tc = 75C 25C -25C 2 4.5 V VGS = 4V 2 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) H5N5001FM Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 20 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test VGS = 10 V, 15 V 2 1 16 12 8 ID=5A 0.5 4 2A 1A 6 2 4 Gate to Source Voltage 8 V GS (V) 10 0.2 0 0.1 0.1 0.2 5 10 20 0.5 1 2 Drain Current I D (A) 50 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test 4 V GS = 10 V Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.2 0.1 0.1 0.2 V DS = 10 V Pulse Test 2 0.5 1 5 10 20 Drain Current I D (A) 50 25 C 75 C Tc = -25 C 3 ID=5A 2 2A 1 0 -40 1A 0 40 80 120 160 Case Temperature Tc (C) H5N5001FM Body-Drain Diode Reverse Recovery Time 1000 5000 2000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss Reverse Recovery Time trr (ns) Capacitance C (pF) 500 200 100 50 1000 500 200 100 50 20 Coss 20 10 0.1 di / dt = 100 A / s V GS = 0, Ta = 25 C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10 5 Crss 0 50 100 150 200 250 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 1000 V DS (V) Drain to Source Voltage 600 VDS 12 Gate to Source Voltage V DD = 100 V 250 V 400 V Switching Time t (ns) 800 VGS V GS (V) I D= 5 A 20 1000 500 Switching Characteristics V GS = 10 V, V DD = 250 V PW = 10 s, duty < 1 % R G =10 16 200 100 50 20 10 0.1 t d(on) tr 0.3 1 3 10 30 Drain Current I D (A) 100 tf t d(off) 400 8 200 V DD = 400 V 250 V 100 V 10 20 30 40 Gate Charge Qg (nC) 4 0 50 0 H5N5001FM Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current I DR (A) Gate to Source Cutoff Voltage VGS(off) (V) 5 Gate to Source Cutoff Voltage vs. Case Temperature V DS = 10 V 8 5, 10 V 6 V GS = 0 V 4 I D = 10mA 3 1mA 0.1mA 2 4 2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 1 0 -50 0 50 100 150 Tc (C) 200 Case Temperature Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 250 V Vin Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr H5N5001FM Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 Normalized Transient Thermal Impedance s (t) D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 1 0.0 tp ul se 0.01 ho ch - c(t) = s (t) * ch - c ch - c = 4.17 C/W, Tc = 25 C PDM PW T 0.003 0.001 10 1s D= PW T 100 1m 10 m PW (S) 100 m 1 10 Pulse Width H5N5001FM Package Dimensions 10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2 As of January, 2001 Unit: mm 0.6 5.0 0.3 2.0 0.3 1.2 0.2 1.4 0.2 12.0 0.3 4.45 0.3 2.5 14.0 1.0 0.5 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM -- Conforms 1.8 g 0.7 0.1 2.54 0.5 2.54 0.5 17.0 0.3 H5N5001FM Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 |
Price & Availability of H5N5001FM
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |